Parameter degradation model and device simulation model for SiC MOSFETs during aging process

Parameter degradation model and device simulation model for SiC MOSFETs during aging process

LIU Qingsong， SUN Pengju， MA Xing

Advanced Technology of Electrical Engineering and Energy ›› 0

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PDF(1971 KB)

Advanced Technology of Electrical Engineering and Energy ›› 0 DOI: 10.12067/ATEEE2504030

Parameter degradation model and device simulation model for SiC MOSFETs during aging process

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 0 https://doi.org/10.12067/ATEEE2504030

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