Parameter degradation model and device simulation model for SiC MOSFETs during aging process

LIU Qingsong, SUN Pengju, MA Xing

Advanced Technology of Electrical Engineering and Energy ›› 2026, Vol. 45 ›› Issue (8) : 31-43.

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Advanced Technology of Electrical Engineering and Energy ›› 2026, Vol. 45 ›› Issue (8) : 31-43. DOI: 10.12067/ATEEE2504030
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Parameter degradation model and device simulation model for SiC MOSFETs during aging process

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2026, 45(8): 31-43 https://doi.org/10.12067/ATEEE2504030

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